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4 June 2018

StratEdge features packages for extreme demands of GaN and GaAs devices at IMS

© Semiconductor Today Magazine / Juno PublishiPicture: Disco’s DAL7440 KABRA laser saw.

In booth 1649 at the IEEE’s International Microwave Symposium (IMS 2018) at the Pennsylvania Convention Center in Philadelphia (12-14 June), StratEdge of San Diego, CA, USA (which designs and manufactures packages and provides chip assembly & test services for microwave, millimeter-wave and high-speed digital devices) is featuring its new line of packages that meet the extreme demands of gallium nitride (GaN) and gallium arsenide (GaAs) devices. StratEdge packages meet the critical requirements of the telecom, mixed signal, VSAT, broadband wireless, satellite, military, test & measurement, automotive, down-hole, and MEMS markets.

StratEdge is showcasing its complete line of post-fired and molded ceramic semiconductor packages operating from DC to 63+GHz. These packages have electrical transition designs that ensure low electrical losses and operate efficiently, even at the highest frequencies. All packages are lead-free and most meet RoHS and WEEE standards. In addition, StratEdge offers complete automated assembly & test services for these packages, including gold-tin solder die attach.

“5G and its high-power infrastructure, the Internet of Things, and advanced cellular technologies requiring RF and microwave frequencies will make package selection critical,” comments president Tim Going. “IMS is a great opportunity for those involved to visit our booth and discuss their packaging requirements.”

See related items:

StratEdge exhibiting high-temp and high-rel packages at CS ManTech and IMAPS HiTEC

StratEdge displaying DC-63GHz packages at IMAPS Device Conference

Tags: StratEdge

Visit: www.ims2018.org

Visit: www.stratedge.com

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