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4 June 2018

ROHM and GaN Systems collaborate on gallium nitride power semiconductors

© Semiconductor Today Magazine / Juno PublishiPicture: Disco’s DAL7440 KABRA laser saw.

Power semiconductor maker ROHM of Kyoto, Japan and GaN Systems Inc of Ottawa, Ontario, Canada (a fabless developer of gallium nitride-based power switching semiconductors for power conversion and control applications) have announced a GaN power semiconductor collaboration, with the goal of contributing to the continuing evolution of power electronics.

The strategic partnership leverages GaN Systems’ capabilities in power GaN transistors along with ROHM’s footprint in semiconductors and resources in the design and manufacture of electronic components. The firms have agreed to jointly develop form-, fit- and function-compatible products using GaN semiconductor dies in both GaN Systems’ GaNPX packaging and ROHM’s traditional power semiconductor packaging. GaN Systems and ROHM say that their customers will have the advantage of having two possible sources for package-compatible GaN power switches, presenting what is claimed to be the widest selection of dual-sourced GaN devices.

Customers will also benefit from greater access to GaN products and resources globally, especially in Asia (one of the fastest-growing market for GaN).

In addition, GaN Systems and ROHM will work together on GaN R&D activities to propose new solutions for the industrial, automotive and consumer electronics fields. Also, to contribute to greater energy savings and increased power densities in the power electronics market, both firms will continue to collaborate to expand their line-up of GaN products and broaden the range of choices.

“Gallium nitride has rapidly made its ascent into power electronics applications and this partnership exemplifies how important GaN has become in a complete power electronics offering,” says GaN Systems’ CEO Jim Witham. “By combining our joint expertise and capabilities, we’re enabling more businesses to access and experience the benefits of GaN in achieving higher-power, more efficient, smaller and lighter power electronics,” he adds.

“ROHM has targeted the power device business as one of our growth strategies,” says ROHM Semiconductor’s senior managing director Katsumi Azuma. “We offer leading-edge products such as SiC (silicon carbide) power devices and provide power solutions that integrate control technologies, including gate drivers that maximize device performance. We are also developing GaN for next-generation power devices,” he adds. “By leveraging the superior technologies and expertise of both companies, we are able to accelerate the development of high-performance solutions to solve the needs of the power market.”

Tags: Rohm GaN Systems E-mode GaN FETs Power electronics

Visit: www.gansystems.com

Visit: www.rohm.com

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