5 June 2018

Infineon to start volume production of CoolGaN 400V and 600V e-mode HEMTs by end 2018

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In booth #412 (hall 9) at PCIM Europe 2018 (Power Conversion and Intelligent Motion) in Nuremberg, Germany (5-7 June), Infineon Technologies AG of Munich, Germany is showcasing CoolGaN products in telecom, adapter, wireless charging and server solutions. With engineering samples available now, the firm announced that it is starting volume production of CoolGaN products by the end of 2018.

“The next big thing in power management is gallium nitride,” believes Steffen Metzger, Infineon’s senior director High Voltage Conversion. “The market for GaN has been gaining a strong momentum; the advantages of using this technology in certain applications are evident,” he adds. “From operating expense and capital expenditure reduction, through higher power density enabling smaller and lighter designs, to overall system cost reduction, the benefits are compelling.”

During the quality management process not only the CoolGaN device is tested but also its behavior in the application. At 100ppm (parts per million), predicted lifetime is about 55 years (exceeding the expected lifespan by 40 years). CoolGaN enables, for example, doubled output power in a given energy storage slot size, freeing up space and realizing higher efficiency at the same time, says Infineon.

Full production of CoolGaN 400V and 600V enhancement-mode high-electron-mobility transistors (e-mode HEMTs) will start by end of 2018. CoolGaN 400V will be available in 70mΩ in SMD bottom-side-cooled TO-leadless and top-side-cooled DSO-20-87 packages. CoolGaN 600V will be available in top-side-cooled DSO-20-87 and bottom-side-cooled DSO-20-85 packages. With 70mΩ and 190mΩ 600V CoolGaN devices in bottom-side-cooled TO-leadless and DFN 8x8 packages, the 600V CoolGaN portfolio will be complemented.

Tags: Infineon

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