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5 June 2018

Exagan launches G-FET power transistors and G-DRIVE intelligent fast-switching products for consumer, industrial and automotive applications

© Semiconductor Today Magazine / Juno PublishiPicture: Disco’s DAL7440 KABRA laser saw.

At PCIM Europe 2018 (Power Conversion and Intelligent Motion) in Nuremberg, Germany (5-7 June), gallium nitride technology start-up Exagan of Grenoble and Toulouse, France (founded in 2014 with support from CEA-Leti and Soitec) is launching its G-FET power transistors and G-DRIVE intelligent fast-switching solution, featuring an integrated driver and transistor in a single package. The firm claims that the GaN-based devices are easy to design into electronic products, paving the way for fast chargers that comply with the USB power delivery (PD) 3.0 type C standard while providing exceptional power performance and integration.

At PCIM Europe, Exagan is showcasing the use of its high-power-density GaN-on-silicon devices to create ultra-fast, efficient and small 45-65W chargers, including demonstrating its electrical-converter expertise and how both the G-FET and G-DRIVE can benefit new converter product designs and their applications.

“The market potential for our products is enormous including all portable electronic devices as well as homes, restaurants, hotels, airports, automobiles and more,” reckons president & CEO Frédéric Dupont. “In the near future, users will be able to quickly charge their smart phones, tablets, laptops and other devices simply by plugging a standard USB cable into a small, generic mobile charger.”

The ability of USB type C ports to serve as universal connections for the simultaneous transfer of electrical power, data and video is leading to tremendous growth. The number of devices with at least one USB type C port will multiply from 300 million units in 2016 to nearly 5 billion by 2021, forecasts market research firm IHS Markit.

Aiming to accelerate the power electronics industry’s adoption of cost-effective GaN-based solutions for the charger market, Exagan uses 200mm GaN-on-Si wafers, achieving highly cost-efficient high-volume manufacturing. The firm is now sampling its fast, energy-efficient devices to key customers while ramping up production to begin volume shipments of G-FET and G-DRIVE products.

See related items:

Exagan partners with HIREX to establish GaN-on-Si's reliability for power converters

Exagan showcasing GaN-on-Si technology and announcing strategic partnership at PCIM Europe

Aixtron ships AIX G5+ C MOCVD system to Exagan for production ramp of GaN-on-Si power-switching devices

Exagan raises €5.7m to produce GaN-on-Si power-switching devices on 200mm wafers

X-FAB and Exagan to co-develop high-volume production of high-speed GaN-on-Si power switching devices on 200mm wafers

Tags: GaN-on-Si GaN switching device on silicon

Visit: www.exagan.com

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