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11 June 2018

Custom MMIC launches GaAs and GaN MMICs at IMS 2018

© Semiconductor Today Magazine / Juno PublishiPicture: Disco’s DAL7440 KABRA laser saw.

At the IEEE MTT International Microwave Symposium (IMS 2018) in Philadelphia, MA, USA (10–15 June), monolithic microwave integrated circuit developer Custom MMIC of Westford, MA, USA has launched the CMD283C3 ultra-low-noise amplifier (ULNA) MMIC, which provides a 0.6dB noise figure, outperforming all other LNA MMICs, it is claimed, and rivaling discrete component implementations. It operates over a frequency range of 2-6GHz (S- and C-band) and has output third-order intercept point (IP3) of +26dBm.

Also being introduced are four members of the firm’s new gallium arsenide (GaAs) MMIC digital attenuator family. The CMD279 and CMD280 operate up to 30GHz with 5-bit control. Attenuation range is up to 15.5dB. Two 2-bit attenuators, the DC-35GHz CMD281 and DC-40GHz CMD282, offer coarser control in 2dB and 4dB steps, respectively. All four devices offer input IP3 of +42dBm.

The latest distributed amplifier, the DC-20GHz CMD249P5, offers a positive gain slope with nominal 12dB gain. The GaAs device features saturated power output (Psat) of +30dBm and output IP3 of +38dBm.

Custom MMIC also continues to enhance its line of low-phase-noise amplifiers (LPNAs). Responding to customer requests to assist in reducing unwanted phase noise and improve signal integrity and target acquisition in military radar systems, these LPNAs operate at up to 40GHz and offer low phase noise performance down to -165dBc/Hz at 10kHz offset. They can serve as local oscillator (LO) drivers or receiver amplifiers in a variety of phased-array radar, electronic warfare (EW), military radio, instrumentation, and aerospace and space communication designs.

Further MMIC releases on the firm’s horizon include more ultra-low-noise amplifiers and digital attenuators, as well as broadband distributed power amplifiers and gallium nitride (GaN) mixers.

Tags: Custom MMIC LNA

Visit: www.custommmic.com

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