, Navitas presenting GaN power ICs at Taiwan power electronics technology forum

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16 January 2018

Navitas presenting GaN power ICs at Taiwan power electronics technology forum

© Semiconductor Today Magazine / Juno PublishiPicture: Disco’s DAL7440 KABRA laser saw.

Navitas Semiconductor Inc of El Segundo, CA, USA says that, at the Micro Electronics 2018 Power Design and Power Components Technology Forum in Taiwan (30 January), its director field application & technical marketing Peter Huang is to deliver a keynote presentation ‘GaN Power ICs Enable Next Generation Power Adaptor Design’.

Huang will share new insights on how what is claimed to be the industry’s first gallium nitride (GaN) power ICs create dramatic increases in speed, efficiency and densities for a broad range of power systems.

Navitas is the silver sponsor of the conference, which presents an interactive forum for innovative manufacturers, partners and customers to share expertise in accelerating adoption of new GaN and SiC devices.

“After 40 years of slow, inefficient silicon devices, the power electronics industry is entering an exciting era of new materials, new devices, new magnetics, new controllers and imaginative topologies,” says Huang. “Navitas looks forward to demonstrating how monolithic integration of power, drive and logic – all in GaN – leads to a new generation of high-efficiency, high-density chargers and adapters for smartphone, laptop, consumer, TV, and new energy applications,” he adds.

See related items:

Navitas demonstrating GaN power IC at CES

Navitas delivers first GaN power ICs

Tags: GaN Power electronics

Visit: www.mem.com.tw/meeting_arti.php?sn=1712190001

Visit: www.navitassemi.com

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