, Littelfuse’s expanded SiC Schottky diode line reduces switching losses, and increases efficiency and robustness

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16 January 2018

Littelfuse’s expanded SiC Schottky diode line reduces switching losses, and increases efficiency and robustness

© Semiconductor Today Magazine / Juno PublishiPicture: Disco’s DAL7440 KABRA laser saw.

Littelfuse Inc of Chicago, IL, USA, which provides circuit protection technologies (including fuses, semiconductors, polymers, ceramics, relays and sensors), has added to its GEN2 family of 1200V silicon carbide (SiC) Schottky diodes (launched last May) by releasing four new series: the LSIC2SD120A08, LSIC2SD120A15 and LSIC2SD120A20 (offering current ratings of 8A, 15A ,20A, respectively, and provided in TO-220-2L packages) and the LSIC2SD120C08 (offering a current rating of 8A in a TO-252-2L package).

GEN2’s merged p-n Schottky (MPS) device architecture is said to enhance surge capability and reduce leakage current. Replacing standard silicon bipolar power diodes with the new GEN2 SiC Schottky diodes allows circuit designers to reduce switching losses dramatically, accommodate large surge currents without thermal runaway, and operate at junction temperatures as high as 175°C, says Littelfuse, allowing substantial increases in power electronics system efficiency and robustness.

“They expand the component options available to circuit designers striving to improve the efficiency, reliability and thermal management of the latest power electronics systems,” says Michael Ketterer, global product marketing manager, Power Semiconductors.

Typical applications include: active power factor correction (PFC); buck or boost stages in DC-DC converters; free-wheeling diodes in inverter stages; and high-frequency output rectification. Markets include industrial power supplies, solar energy, industrial motor drives, welding and plasma cutting, EV charging stations, and inductive cooking fields.

GEN2 SiC Schottky diodes are claimed to offer the following benefits:

  • best-in-class capacitive stored charge and negligible reverse recovery (ensuring switching losses are extremely low and reducing stress on the opposing switch), making them suitable for high-frequency power switching;
  • best-in-class forward voltage drop (VF), providing low conduction losses; and
  • maximum junction temperature of 175°C, allowing a larger design margin and relaxed thermal management requirements.

The new LSIC2SD120A08, LSIC2SD120A15 and LSIC2SD120A20 series are available in tubes in 1000-unit quantities. The LSIC2SD120C08 series is available in tape & reel in quantities of 2500. Sample requests can be placed through authorized Littelfuse distributors worldwide.

See related items:

Littelfuse launches its first GEN2 1200V SiC Schottkys

Littelfuse invests a further $15m in Monolith, taking a majority stake

Monolith makes availability 1200V SiC Schottky engineering samples

Monolith relocates from New York to Texas following X-FAB partnership

Monolith and X-FAB partner on SiC power diode and MOSFET production

Tags: SiC Schottky barrier diodes

Visit: www.littelfuse.com

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