28 February 2018
GaN Systems launches highest-current GaN power transistor
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In booth #1041 at the Applied Power Electronics Conference & Exposition (APEC 2018) in San Antonio, TX, USA (4-8 March), GaN Systems Inc of Ottawa, Ontario, Canada (a fabless developer of gallium nitride-based power switching semiconductors for power conversion and control applications) is launching what it claims is the most powerful line of GaN transistors.
With power levels continuing to rise (creating the need for higher operating current), the advantages of gallium nitride can be applied to much higher power levels in the automotive, industrial and renewable energy industries, the firm notes.
With twice the current capability of GaN Systems’ highest-rated-current part, the new GS-065-120-1-D 120A, 650V GaN enhancement-mode high-electron-mobility transistor (E-HEMT) effectively allows a doubling of power processing for the same volume, increasing the power density of 20-500kW power conversion systems, including automotive traction inverters, very high-power on-board chargers (OBC), large-scale energy storage systems, and industrial motor drives.
Sold as a die to customers building modules, the GS-065-120-1-D is reckoned to be the lowest-RDS(on), highest-current 650V GaN HEMT in the power semiconductor industry. Modules are an important form factor in high-power electronics, constituting up to 40% of the market based on form factor. Customers can use the new die product in half-bridge, full-bridge and six-pack module topologies to create enhanced, high-power designs.
“This is the most pivotal GaN product on the market to be optimized for modules and is compatible with both embedded and traditional module technology,” says CEO Jim Witham. “As an extension of our flagship product, it encompasses all the benefits of GaN technology and our approach to GaN power transistors – ease of use, high power density, and high efficiency – enabling power systems that are smaller in size and lower cost with unprecedented power levels.”