, Applied Optoelectronics launches 100G single-lambda PAM-4 electro-absorption modulated laser

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22 February 2018

Applied Optoelectronics launches 100G single-lambda PAM-4 electro-absorption modulated laser

© Semiconductor Today Magazine / Juno PublishiPicture: Disco’s DAL7440 KABRA laser saw.

Applied Optoelectronics Inc (AOI) of Sugar Land, TX, USA – a manufacturer of optical components, modules and equipment for fiber access networks in the Internet data-center, cable TV broadband, fiber-to-the-home (FTTH) and telecom markets – has launched a 100Gbps electro-absorption modulated laser (EML) for next-generation 400Gbps optical transceivers.

High-speed EMLs are suitable for long-distance transmission due to their small chirp and low chromatic dispersion in fiber. The new EMLs operate at 1310nm, with a symbol rate of 53Gbaud, and are suitable for use with pulse amplitude modulation, enabling a data rate of 100Gbps over a single wavelength. Through careful optimization, AOI was able to achieve a very high bandwidth of 38GHz at 25°C and greater than 32GHz up to a transceiver case temperature of 70°C. The new lasers have demonstrated good 100Gbps PAM-4 eyes over transceiver case temperature of 70°C with a transmitter dispersion eye closure quaternary (TDECQ) value meeting the IEEE 802.3 and 100G Lambda MSA standards.

The new lasers are based on AOI’s mature high-volume and high-yield laser production technology, and are suitable for the development of 100G DR1 and 400G DR4/FR4 transceivers for up to 10km fiber transmission. Transceivers operating at 400Gbps can be designed by combining four 100Gbps lasers, either in a coarse wavelength division multiplexed (CWDM) or parallel single-mode (PSM) arrangement. The resulting transceiver can share a common optical bench platform and similar production techniques as AOI currently utilizes in its production of 100G transceivers. By leveraging this common platform, AOI expects to offer substantial cost and time-to-market advantages over its competitors.

“The 100Gbps single-lambda laser is a key enabling technology for high-performance next-generation 400G transceivers,” reckons Dr Jun Zheng, vice president of R&D. “With the addition of this new 100Gbps EML laser and the previously announced 100Gbps PAM-4 directly modulated laser (DML), AOI extends its technological leadership in laser development for cost-effective and high-performance 400G transceivers to longer-distance applications, potentially extending beyond the intra-datacenter realm,” he adds.

AOI is demonstrating both its 100G single-lambda EML and DML in booth #2739 at the Optical Networking and Communication Conference & Exhibition (OFC 2018) in San Diego (13-15 March).

See related items:

Applied Optoelectronics announces 100Gbps per lambda PAM4 directly modulated lasers

Tags: 400G Optical transceivers

Visit: www.ofcconference.org/

Visit: www.ao-inc.com

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