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1 August 2018

VisIC announces 9kW GaN half bridge without paralleling

© Semiconductor Today Magazine / Juno PublishiPicture: Disco’s DAL7440 KABRA laser saw.

VisIC Technologies Ltd of Nes Ziona, Israel – a fabless developer of power conversion devices based on gallium nitride (GaN) metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) – has announced a new water-cooled V22N65A-HBEVB half-bridge evaluation board to demonstrate the high-power performance achievable using its GaN All-Switches (advanced low-loss switches).

The V22N65A-HBEVB evaluation platform consists of:

  • a half-bridge power stage using 22mΩ GaN All-Switches;
  • an isolated half-bridge driver from Silicon Labs (Si82394);
  • two isolated auxiliary power supplies from Murata (NXE251212MC);
  • dead time control from 75ns to 200ns; and
  • high-current (85A) connectors from Wurth Electronics (74655095R).

The evaluation platform can be operated in any half-bridge topology and was tested in buck and boost topologies up to 9kW, using only single V22N65A transistors. This is said to be the first GaN-based solution on the market that can deliver up to 9kW of power, without the need for paralleling, making it suitable for high-density on-board chargers (OBC) in hybrid and electric vehicles.

The V22N65A All-Switch SMD discrete top-cooled devices feature ultra-low conduction and switching losses coupled with an advanced isolated package design, allowing maximum performance and power out of each GaN device, the firm says.

A low parasitic inductance power and gate loop design, combined with a high threshold voltage (5V), allows designers to safely employ VisIC GaN switches in high-power applications in the multi-kW range.

The All-In-One water-cooled V22N65A-HBEVB is available at a cost of $600. An air-cooled version is available for $500.

Tags: GaN-on-Si power transistor

Visit: www.visic-tech.com

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