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24 April 2018

EPC launches 350V, 65mΩ, 26A eGaN power transistor − 20 times smaller than silicon equivalent

© Semiconductor Today Magazine / Juno PublishiPicture: Disco’s DAL7440 KABRA laser saw.

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA – which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications – has launched the EPC2050, a 350V GaN transistor with a maximum RDS(on) of 65mΩ and a 26A pulsed output current. Applications include electric vehicle (EV) charging, solar power inverters, motor drives, and multi-level converter configurations, such as a 3-level, 400V input to 48V output LLC converter for telecom or server power supplies.

The EPC2050 is just 1.95mm x 1.95mm (3.72mm2), so designers no longer have to choose between size and performance, says the firm. A highly efficient half-bridge with gate driver hence occupies five times less area than a comparable silicon solution. Despite the small size of the chip-scale packaging, the EPC2050 is said to handle thermal conditions more efficiently than plastic-packaged MOSFETs.

“The performance and cost gap of silicon with eGaN technology widens with the 350V EPC2050, that is almost 20 times smaller than the closest silicon MOSFET,” says CEO Alex Lidow.

In addition, the 2” x 1.5” (51mm x 38mm) EPC9084 development board is a 350V (maximum device voltage) half-bridge featuring the EPC2050 and the Silicon Labs Si8274GB1-IM gate driver, designed for optimal switching performance and containing all critical components for easy evaluation of the 350V EPC2050 eGaN FET.

The EPC2050 eGaN FET is priced at $3.19 each (in 1000-unit quantities) and the EPC9084 development board is priced at $118.75 each. Both are available for immediate delivery from distributor Digi-Key Corp.

Tags: EPC E-mode GaN FETs GaN-on-Si

Visit: www.digikey.com/Suppliers/us/Efficient-Power-Conversion

Visit: www.epc-co.com

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