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17 April 2018

Diamond Microwave launches slimline 200W and 400W X-band GaN solid-state power amplifiers

© Semiconductor Today Magazine / Juno PublishiPicture: Disco’s DAL7440 KABRA laser saw.

Diamond Microwave Devices Ltd of Shipley, UK (which specializes in microwave power amplifiers) has launched a range of compact microwave gallium nitride (GaN)-based pulsed solid-state power amplifiers (SSPAs) in a new ‘slimline’ format, which includes 200W and 400W models operating in the X-band. Meanwhile, the firm’s entire SSPA product range has been rationalized, and further new models have been added that include a 1kW pulsed C-band amplifier operating at 5.2–5.9GHz and an X-band 1kW amplifier mounted in a 19” rack enclosure.

The DM-X200-04 and DM-X400-04 are compact pulsed X-band GaN SSPAs with minimum peak pulsed output power specified at 200W (+53dBm) and 400W (+56dBm), respectively, over a 1300MHz bandwidth, operating with pulse widths up to 100µs and with duty cycles up to 15%. Saturated power gain is nominally 55dB. Both models feature built-in phase control to optimize power combining, and they form a compact alternative to vacuum traveling-wave tube (TWT) amplifiers in demanding defence, aerospace and communications applications. The new SSPAs are slimline versions of the flagship DM-X200-02 and DM-X400-02 ‘smart’ high-power amplifiers (HPA), measuring only 150mm x 197mm x 30mm.

The SSPAs can be combined with an external Diamond Microwave two-way power combiner to realise a DM-X1K0-03 and to achieve more than 900W peak pulse power. The DM-X200-04 and DM-X400-04 incorporate an internal electronically adjusted phase shifter, which is used to optimize the combining phase and can be applied if alternative combiners are used.

Like all Diamond Microwave HPAs, the designs are flexible in layout and architecture and can be tailored to meet individual specifications and enclosure requirements. N-type output connectors are fitted as standard, but waveguide can be offered as an option.

“The amplifiers based on our new slimline platform are ideal for applications that do not require the sophisticated Ethernet monitoring provided by the ‘smart’ amplifier platform,” says managing director Richard Lang. “Both common platforms feature standardized mechanical and electrical interfaces, and all our designs can readily be customized to meet individual requirements. For example, we have recently produced a high-linearity model, and also a design that can employ either gate-pulsing or drain-pulsing to suit the class of amplification required.”

While standardizing on interfaces and operating characteristic across its models, Diamond Microwave’s broadband 2–6GHz amplifier has adopted a new enclosure design that is extremely compact for its power output.

See related items:

Diamond Microwave streamlines GaN SSPA range

Tags: Diamond Microwave Devices GaN SSPA

Visit: www.diamondmw.com

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