, IXYS launches dual 1200V SiC Schottky diodes in SOT-227 packages with average forward current of 2 x 22A and 2 x 65A

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14 July 2017

IXYS launches dual 1200V SiC Schottky diodes in SOT-227 packages with average forward current of 2 x 22A and 2 x 65A

IXYS Corp of Milpitas, CA, USA and Leiden, The Netherlands (which provides power semiconductors and mixed-signal ICs for power conversion and motor control applications) has launched the DCG45X1200NA and DCG130X1200NA dual 1200V-rated silicon carbide (SiC) Schottky diodes in fully isolated MiniBLOC (SOT-227) package.

Both offer two SiC Schottky diodes with an average forward current of 2 x 22A and 2 x 65A, respectively at 80°C case temperature and essentially zero forward and reverse recovery. This involve reduced turn-on and turn-off losses of the diodes and the related switches, resulting in higher power efficiency. The positive temperature coefficient of the forward voltage drop makes it easy to parallel devices for higher output power, says the firm.

The MiniBLOC package uses an advanced isolation structure with an optimized low thermal resistance. Lower dynamic losses and reduced thermal impedance allow reduced system size due to higher power density and switching frequency. Added benefits include an increase in reliability due to a lower die temperature swing in cycling power demand.

Existing products in the family include the DCG85X1200NA and DCG100X1200NA. “With these new products we are expanding our fast diode portfolio and enable applications with higher power in switching and control for inverters, UPS [uninterruptible power supplies] and rapid charger solutions,” says Dr Elmar Wisotzki, director of technology for IXYS Germany. “Our SiC Schottky portfolios give our customers more flexibility in choosing the right product for their application to improve efficiency at best performance-over-cost ratio,” he adds. “The SOT-227 package is a good match with our standard power MOSFETs and IGBTs, enabling a low-profile and high-power-density design.”

The diodes inside the package are electrically isolated from each other, allowing the designer to connect them either in parallel and build common cathode or phase leg configurations.

Typical applications are high-efficiency DC-DC converters, power inverters, uninterruptible power supply (UPS) systems, high-performance power supplies, welding equipment and rapid-charger solutions.

See related items:

IXYS launches dual 1200V SiC Schottky diodes in SOT-227 packages for higher-power applications

IXYS launches 1200V SiC power MOSFETs in SOT227 MiniBLOC packages for higher-power applications

Tags: IXYS SiC power MOSFET

Visit:  www.ixys.com

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