14 July 2017
GTAT launches SiC boule growth furnace addressing emerging demand for 6” wafers
GT Advanced Technologies of Merrimack, NH, USA (which produces crystal growth equipment for the solar PV and power electronics industries as well as sapphire material for precision optics and other specialty industries) has made available for commercial sale a silicon carbide (SiC) production system with what is said to be a stable and repeatable process, capable of producing semiconductor-grade, 6-inch silicon carbide boules.
The firm hence now offers a complete SiC production solution capable of achieving what are claimed to be industry-leading cost points, including the SiClone200 production-ready sublimation furnace, along with process technology, hot zones and technical support to companies aiming to produce SiC boules and wafers.
“Much of the world’s silicon carbide production remains captive, which limits supply and keeps prices high,” notes CEO Greg Knight. “Our silicon carbide solution will help to increase the availability of silicon carbide semiconductors at significantly lower costs by increasing supply as production increases,” he adds. “We view this as a key step in enabling new high-power semiconductor applications targeting market verticals such as electric vehicles and next-generation PV inverters.”
GT says that it has a history of developing SiC equipment and solutions going back more than 15 years. The firm claims to have pioneered the growth of 2- and 4-inch SiC boules in its SiClone sublimation furnaces, and reckons that it is well positioned to offer production-ready solutions with technology covering the entire production process.