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18 January 2017

Mouser signs global distribution agreement with United Silicon Carbide

Mouser Electronics Inc has announced a global distribution agreement with device maker United Silicon Carbide Inc (USCi) of Monmouth Junction, NJ, USA. USCi technology and products enable affordable power efficiency in key markets, including wind and solar power, transportation, smart grid technology, and motor control.

The USCi product line available from Mouser Electronics includes 650V and 1200V SiC Schottky diodes. USCi's 650V Schottky diodes are available in a TO-220 package with forward currents ranging from 4A to 10A, or in a TO-247 package with forward currents of 16A or 20A. The 650V diodes in the TO-220 package are also available with either enhanced surge capabilities or a surge bypass silicon diode that is suitable for AC/DC boost and power factor correction (PFC) converters. USCi's 1200V Schottky diodes are available in a TO-220 package in forward currents of 5A to 15A, or in a TO-247 package with a current of 20A or 30A.

With zero reverse recovery charge and a maximum junction temperature of 175°C, USCi's RoHS-compliant diodes are suitable for high-frequency and high-efficiency power systems with minimum cooling requirements.

Tags: SiC JFETs SiC Schottky barrier diodes SiC power devices

Visit: www.mouser.com/usci

Visit: www.unitedsic.com

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