, Delta joins BMW i Ventures as strategic investor in GaN Systems

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12 December 2017

Delta joins BMW i Ventures as strategic investor in GaN Systems

© Semiconductor Today Magazine / Juno Publishing

GaN Systems Inc of Ottawa, Ontario, Canada – a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications – says that power systems firm Delta has joined BMW i Ventures in participating in a strategic investment.

GaN Systems plans to use the funding to expand global sales and accelerate product innovation. The latest announcement follows previous investments from backers including BMW i Ventures, BDC Capital, Chrysalix Venture Capital, Cycle Capital Management, RockPort Capital and Tsing Capital.

“This investment reaffirms GaN Systems’ continued accomplishment in creating the future of the most energy-efficient power electronics,” comments BMW i Ventures’ managing director Uwe Higgen. “GaN Systems’ is pioneering a new approach to the design and creation of power systems that are smaller and lighter, while simultaneously providing more efficient and reliable power conversion,” he adds.

“It’s a huge vote of confidence, both in GaN as a technology and GaN Systems’ approach to GaN transistors, to have investment partners such as Delta and BMW i Ventures,” says GaN Systems’ CEO Jim Witham.

GaN Systems says that this year it has is experienced a rapid increase in customer growth and increasingly strong demand for GaN transistors, especially in notebook travel adapters, computer server and industrial motor power applications.

See related items:

GaN Systems completes investment round led by BMW i Ventures

GaN Systems raises $20m in Series C financing

GaN Systems closes Series B funding after development milestones achieved ahead of schedule

GaN Systems closes first-round funding

Tags: GaN Systems E-mode GaN FETs Power electronics

Visit: www.gansystems.com

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