18 April 2017
Latest issue of Semiconductor Today now available
For coverage of all the key business and technology developments in compound semiconductors and advanced silicon materials and devices over the last month, subscribe to Semiconductor Today magazine.
Published today and free of charge, Semiconductor Today’s latest issue covers all that is new in gallium arsenide (GaAs), indium phosphide (InP), nitrides, silicon carbide (SiC), silicon germanium (SiGe) and other compound semiconductor materials. The magazine also covers the devices and applications that these materials enable.
Articles in this issue include:
- Improving InAsSb nanowire optical quality on silicon
- Increasing light output power from GaN LEDs with p-trenches
- Aluminium indium gallium nitride electron-blocking layers
- GaN quantum dot emission at 232nm deep ultraviolet
- Bulk GaN substrate market growing at 10% CAGR to $100m in 2022, from 60,000 wafers in 2016
- Silicon and III-nitride high-voltage monolithic cascode diode
- Bulk aluminium nitride platform for GaN high voltage and power
- N-polar GaN gives record power density and efficiency at 94GHz
- GaN on silicon on insulator metal-organic vapor phase epitaxy
- Vertical gallium nitride moves for power electronics
Plus, there's the news from organisations such as: 5N Plus, Advantech, Aixtron, Analog Devices, Anokiwave, AXT, Cree, Daylight, EPC, EpiValence, Everlight, EV Group, Finisar, First Solar, Imec, MACOM, Midsummer, Mitsubishi Electric, NeoPhotonics, Osram, Pasternack, Peregrine, POET, Princeton Optronics, Qorvo, RFHIC, Riber, Rubicon, Samsung, Seoul Semiconductor, Soitec, Solliance, Skyworks, Stion, Suss Microtec, TowerJazz, Transphorm, Veeco, Wolfspeed, and much more.
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