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IQE

9 September 2016

Wolfspeed completes C-band radar range with 70W GaN HEMT pre-driver operating at 4.5–5.9GHz

Wolfspeed of Research Triangle Park, NC, USA — a Cree Company that makes gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs) — has announced its complete lineup of high-efficiency, high-gain and wide-bandwidth devices for C-band radar systems with the introduction of its CGHV59070 GaN HEMT, which will be on display in booth #156 at European Microwave Week (EuMW 2016) at ExCel London, UK (3–7 October).

Designed to operate at 4.5–5.9GHz from a 50V rail, the new 70W GaN HEMT is suitable as a driver for the 350W CGHV59350 GaN HEMT for 5.2–5.9GHz operation (launched in May 2015), which is claimed to be the highest-power C-band radar device on the market. Delivering 90W typical POUT at 50V, in addition to 55% drain efficiency at high 14dB power gain, the internally matched CGHV59070 offers a general-purpose broadband solution for RF and microwave applications, and is especially suitable for use in linear and compressed amplifier circuits in marine radar, weather monitoring, air & maritime vessel traffic control, and port security applications.

"First demonstrated at this year's International Microwave Symposium [IMS 2016 in late May], the market release of the new 70W CGHV59070 pre-driver completes Wolfspeed's C-band radar lineup of pre-drivers, drivers and output stages, enabling 1kW, all-GaN SSPAs [solid-state power amplifiers] for C-band radar applications," says RF & microwave director Jim Milligan. "This latest introduction also further extends our comprehensive radar product portfolio, which helps designers achieve smaller, lighter and higher-power RF amplifiers that are critical for the development of the next-gen military, aerospace and commercial radar applications."

The CGHV59070 can be supplied in a ceramic/metal flange or pill package, and can be shipped either individually or alongside or installed on a test board.

Wolfspeed says that, compared with conventional silicon (Si) and gallium arsenide (GaAs) devices, its GaN-on-SiC RF devices deliver higher breakdown voltage, higher temperature operation, higher efficiency, higher thermal conductivity, higher power density and wider bandwidths, all of which are critical for achieving higher-performing microwave and RF products needed for emerging systems across a variety of applications. In addition to C-band radar power amplifiers, Wolfspeed's GaN-on-SiC RF devices are also enabling next-generation broadband, public safety, and ISM (industrial, scientific & medical) amplifiers; broadcast, satellite, and tactical communications amplifiers; UAV (unmanned aerial vehicle) data links; cellular infrastructure; test instrumentation; and two-way private radios.

See related items:

Infineon to acquire Wolfspeed for $850m

Wolfspeed highlighting GaN-on-SiC RF HEMTs at IMS 2016

Tags: Wolfspeed GaN RF GaN-on-SiC

Visit: www.wolfspeed.com/cghv59070

Visit: http://go.wolfspeed.com/eumw2016

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