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16 September 2016

VisIC launches 1200V family of GaN power switching devices with integral iso-driver

At the IEEE Energy Conversion Congress and Exposition (ECCE2016) in Milwaukie, WI, USA (18-22 September), VisIC Technologies Ltd of Nes Ziona, Israel - a fabless developer of power conversion devices based on gallium nitride (GaN) metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) founded in 2010 - is launching a family of high-voltage GaN devices for switching power electronics designs.

With a 1200V rating, the GaN modules have typical on-resistance (R DS(ON)) down to just 0.04Ω. Target applications are power converters for motor drives, three-phase power supplies and other applications requiring current switching up to 50A (current limit at the first line of products).

The GaN devices are based on VisIC's ALL Switch (Advanced Low Loss Switch) second-generation HEMT technology, which combines high levels of cell integration with optimized cell design, says chief technology officer Gregory Bunin. "This technology supports reduced gate charge and capacitances without losing the benefits of low RDS(ON), with our GaN devices offering an ultra-low maximum switching energy down to 140µJ," he adds.

Switching losses are 3-5 times lower compared to SIC MOSFETs counterparts, it is reckoned. The isolated gate driver is integrated in an isolated DIP power package.

The new GaN devices represent high-voltage supplements to VisIC's existing ALL Switch line-up of 650V GaN devices.

See related items:

VisIC launches low-RDS(ON) 650V GaN switch product line in bottom-side-cooled package for switching up to 12A

VisIC launches new generation of low-Rdson ALL-Switch 650V GaN devices usable with standard drivers

VisIC launches 650V half-bridge evaluation board

VisIC makes available evaluation board and samples for 650V GaN power switch

VisIC launches 650V normally-off GaN power switches

Tags: GaN-on-Si power transistor

Visit: www.ieee-ecce.org

Visit: www.visic-tech.com

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