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28 October 2016

GaN Systems co-founder & CTO to deliver WiPDA 2016 keynote address showcasing GaN's value to automotive market

GaN Systems Inc of Ottawa, Ontario, Canada, a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications, says that co-founder & chief technology officer John Roberts will deliver the keynote address at the 4th IEEE Power Electronics Society Workshop on Wide Bandgap Power Devices and Applications (WiPDA 2016) at The Chancellor Hotel in Fayetteville, AR, USA (7-9 November).

The presentation 'GaN Power Transistors – Powering Up' (to an audience of device scientists, circuit designers, and application engineers) will focus on the existing state of high-current GaN power transistors and will discuss how GaN Systems' 100V and 650V GaN transistors are positioned to meet automotive power systems requirements.

Roberts has been a champion of gallium nitride technology for over a decade. Over that period, he has spearheaded the research, development, manufacturing and large-scale production of GaN devices that are now being designed into power systems across the consumer, data-center, industrial, transportation and energy markets. Roberts will share his perspective on where power design engineers are using GaN transistors to solve power management challenges. He will also present examples where GaN transistors have been used to make systems more efficient, smaller, lighter and less costly.

See related items:

GaN Systems' founders Girvan Patterson and John Roberts to retire

Tags: GaN Systems Power electronics

Visit: www.wipda2016.org/

Visit: www.gansystems.com

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