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2 November 2016

Navitas' CEO presenting AllGaN power ICs at WiPDA 2016

At the IEEE Power Electronics Society 4th IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA) at The Chancellor Hotel, Fayetteville, AR, USA (7–9 November), Navitas Semiconductor Inc of El Segundo, CA, USA says that, in a keynote 'Speed Drives Performance' (at 9am on 9 November), its CEO Gene Sheridan is presenting the advantages of what it claims are the first gallium nitride (GaN) power ICs, which use the firm's proprietary 'AllGaN' technology. A technical paper '650V AllGaN Power IC for Power Supply Applications' (1068) is being presented later the same day by VP of IC design Marco Giandalia.

WiPDA provides a forum for device scientists, circuit designers and application engineers from the Power Electronics and Electron Devices Societies to share technology updates, research findings, development experience and potential applications.

"Power systems can achieve a dramatic improvement in charging speed, power densities and cost reduction if high switching speeds can be combined with high energy efficiencies," says Sheridan. "Navitas is leading a high-speed revolution in power electronics with the invention of the industry's first GaN power ICs, which enable up to a 100x increase in switching speeds and a 3x increase in energy savings," he claims.

Navitas' AllGaN 650V platform monolithically integrates GaN power field-effect transistors (FETs) with GaN logic and drive circuits and enables 10-100x higher switching frequency than existing silicon circuits, it is reckoned, making power electronics smaller, lighter and lower cost. A new generation of high-frequency, energy-efficient converters is being enabled for smartphone and laptop chargers, OLED TVs, LED lighting, solar inverters, wireless charging devices and data centers.

"The IEEE has a long history of identifying and nurturing new generations of technology," says professor Alan Mantooth, general chair WiPDA 2016. "GaN is clearly demonstrating efficiency and performance advantages over traditional power semiconductors," he concludes.

Tags: GaN Power electronics

Visit: www.wipda2016.org/

Visit: www.navitassemi.com

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