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IQE

30 November 2016

Millitech launches GaN power amplifiers delivering 2.5W in E-band and W-band at 20% PAE

Millitech Inc of Northampton, MA, USA (a microwave brand of Smiths Interconnect that designs and manufactures millimeter-wave components, assemblies, subsystems and and fully integrated systems for satellite communications, radiometry, radar and remote sensing applications) has launched gallium nitride (GaN)-based power amplifiers with high output power and power-added efficiency (PAE) at E-band and W-band frequencies.

Offering up to 2.5W of output power and up to 20% PAE, typical gain figures are 15-40dB. Single device models are available with nearly 1W of output power, while 2-way and 4-way solid-state power amplifiers (SSPAs) with up to 2.5W of saturated output power are available. Higher power outputs are also available.

Additionally, each amplifier in the series comes standard with internal voltage regulation, bias-sequencing circuitry, and reverse voltage protection.

The E-band and W-band GaN power amplifiers can be used in applications ranging from E-band radio, remote sensing, and as high-power millimeter-wave sources. They are also of high enough quality to be used for test and measurement applications, says the firm. The high output power of the E-band and W-band PAs eliminates the need for comparatively large and expensive combiners and waveguide interconnects necessary for less powerful amplifiers, notes Millitech.

See related items:

Millitech launches GaN-based E- and W-band millimeter-wave solid-state power amplifiers

Tags: GaN PAs

Visit: www.millitech.com

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