Temescal

Semigas

CLICK HERE: free registration for Semiconductor Today and Semiconductor Today ASIACLICK HERE: free registration for Semiconductor Today and Semiconductor Today ASIA

Join our LinkedIn group!

Follow ST on Twitter

IQE

4 November 2016

GaN Systems launches evaluation platform for GaN transistors

GaN Systems Inc of Ottawa, Ontario, Canada - a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications – has launched a daughterboard-style evaluation kit to help power design engineers to evaluate GaN enhancement-mode HEMT (E-HEMT) performance in any system design, along with a universal motherboard (GS665MB-EVB). Ranging from 750W to 2500W, the family of four daughterboards consists of two GaN Systems' 650V GaN E-HEMTs and all necessary circuits, including half-bridge gate drivers, isolated power supplies and an optional heat-sink to form a high-performance half-bridge power stage.

GaN Systems says that several features maximize the evaluation platform's utility:

  • The platform serves as a reference design and evaluation tool as well as a deployment-ready solution for easy in-system evaluation.
  • The vertical mount style has a 35mm height, which fits the majority of 1U design and allows evaluation of GaN E-HEMT in a traditional through-hole-type power supply board.
  • A current shunt position is provided for easy switching energy characterization testing.
  • A universal form factor and footprint are used to allow users to compare various power levels for optimal cost/performance decisions.

The evaluation platform family of boards includes the following evaluation boards:

  • GS66504B-EVBDB (using the GS66504B 650V/15A, 100mΩ GaN E-HEMT);
  • GS66508B-EVBDB (using the GS66508B 650V/30A, 50mΩ GaN E-HEMT);
  • GS66508T-EVBDB (using the GS66508T 650V/30A, 50mΩ, top-side-cooled GaN E-HEMT);
  • GS66516T-EVBDB (using the GS66516T 650V/60A, 25mΩ, top-side-cooled GaN E-HEMT); and
  • GS665MB-EVB (universal 650V motherboard using all the above GaN HEMTs).

GaN Systems is also launching the GS61008P-EVBBK, a highly efficient 48V to 12V synchronous buck converter based on the GS61008P 100V, 90A GaN E-HEMT. The firm says that this system demonstrates very high efficiency at frequencies up to 2MHz, commonly desired in 48V systems.

"By developing this family of GaN E-HEMT evaluation boards, we are providing power design engineers with the tools to easily evaluate and optimize GaN transistor performance in their systems," says VP sales & marketing Larry Spaziani. "Our evaluation kits facilitate development of AC/DC, energy storage, DC/DC and other power systems. The kits benefit developers across the consumer, data-center, industrial, transportation, and energy markets."

Tags: GaN Systems Power electronics

Visit: http://gansystems.com/eval-boards.php

Share/Save/Bookmark
See Latest IssueRSS Feed

AXT