12 May 2016

Toshiba's second-gen SiC Schottkys deliver 50% greater current density and improved surge current ratings

In booth 301 (hall 9) at PCIM (Power Conversion and Intelligent Motion) Europe 2016 in Nuremberg, Germany (10-12 May), Toshiba Electronics Europe of Düsseldorf, Germany (TEE, the European electronic components business of Tokyo-based Toshiba Corp) has unveiled new Schottky barrier diodes (SBDs) based on the firm's second-generation silicon carbide (SiC) technology. The SBDs deliver current densities up to 50% higher than first-generation devices and can handle significantly higher forward surge currents. 

With its second-generation SiC process, Toshiba has been able to reduce die thickness to develop SBDs with current densities about 1.5x higher than first-generation devices. In addition, they also offer higher non-repetitive forward surge current (IFSM) ratings.

The first products in the second-generation line-up will be 650V devices with current ratings of 4A (TRS4E65F), 6A (TRS6E65F), 8A (TRS8E65F), and 10A (TRS10E65F) in TO-220 2-pin and TO-220 isolated 2-pin packages. These TRS…A65F diodes are suitable for high-speed switching power conversion designs including power factor correction (PFC) schemes, photovoltaic inverters and uninterruptible power supplies (UPS). Toshiba's SiC SBDs can also be used to improve the efficiency of switching power supplies through the replacement of conventional silicon diodes.

Tags: Toshiba SiC Schottky barrier diodes

Visit: www.mesago.de/en/PCIM/main.htm

Visit: www.toshiba.co.jp