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23 May 2016

Qorvo's GaN transistor passes stringent environmental tests, proving readiness for public safety and defense applications

Qorvo Inc of Greensboro, NC and Hillsboro, OR, USA (which provides core technologies and RF solutions for mobile, infrastructure and defense applications) says that its 15W gallium nitride on silicon carbide (GaN-on-SiC) wideband input-matched transistor has completed stringent environmental testing, demonstrating its reliability for use in defense and emergency response communications equipment.

"Qorvo has experience applying GaN technology to handheld communications equipment, like wideband handheld radios for first responders, with products that must operate reliably in challenging environmental conditions," says Roger Hall, general manager of the Defense & Aerospace Products business unit. "Qorvo's QPD1000 recently passed JEDEC's JESD22- A110D Highly Accelerated Temperature/Humidity Stress Test (HAST), proving its reliability in harsh environmental conditions, including severe temperature, humidity and bias."

HAST measures a device at 130°C, 85% relative humidity and high atmospheric pressure for a minimum of 96 hours. Additional testing is ongoing, demonstrating the QDP1000's ability to exceed the industry standard test.

The QPD1000 wideband input-matched GaN transistor is offered in a low-cost, space-saving surface-mount plastic DFN package and operates at 30-1215MHz. With an integrated wideband input-matching network, the QPD1000 enables wideband gain and power performance along with high efficiency. The output can be matched on the board to optimize power and efficiency for any region within the band. The QDP1000 can be used in continuous wave and pulsed signals for defense and public safety communications applications.

Qorvo is the leading GaN RF supplier for the defense and cable industries, according to market research firm Strategy Analytics. Since 1999, Qorvo has been offering proven GaN circuit reliability and compact, highly efficient products. Qorvo is a Defense Manufacturing Electronics Agency accredited 1A Trusted Source, having completed the Defense Production Act Title III GaN on SiC program in 2014. The firm remains the only GaN supplier to have achieved Manufacturing Readiness Level (MRL) 9.

Qorvo's GaN products are being showcased in booth 839 at the IEEE International Microwave Symposium (IMS 2016) in San Francisco (22-27 May).

Tags: Qorvo

Visit: www.ims2016.org

Visit: www.qorvo.com

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