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3 May 2016

Exagan showcasing GaN-on-Si technology and announcing strategic partnership at PCIM Europe

In booth #9-230 at the PCIM (Power Conversion Intelligent Motion) Europe 2016 trade show in Nuremberg, Germany (at 11:30am on 10 May), Exagan of Grenoble, France, a gallium nitride (GaN) technology start-up that enables smaller and more efficient electrical converters, will announce its latest strategic partnership to develop and commercialize GaN-on-silicon products.

Based in Grenoble, France (with a branch office in Toulouse), Exagan was spun off in 2014 from Soitec and micro- and nanotechnology research center CEA-Leti (with financial support from each), and licenses materials and technology from both organizations. Exagan aims to accelerate the power-electronics industry's transition from silicon-based technology to GaN-on-Si technology, enabling smaller and more efficient electrical converters. Its GaN power switches are designed for full compatibility with manufacturing in standard 200mm-wafer silicon foundries to deliver high-performance, high-reliability products through a robust supply chain.

The new partnership will be the third major alliance to be announced by Exagan in the past 12 months. In the span of two weeks last May, the firm entered a strategic partnership with CEA-Leti to accelerate the GaN-on-Si technology integration roadmap and a joint development agreement with X-FAB Silicon Foundries AG of Erfurt, Germany to develop a high-volume production process for GaN-on-Si devices using 200mm wafers.

GaN-on-Si technology's capabilities in power integration and energy efficiency can increase the performance and decrease the size of power converters, says Exagan, making these systems suitable for a wide range of applications – from electric vehicles and solar energy to industrial electronics and re-charging consumers' mobile devices.

Also at PCIM Europe, Exagan will showcase its latest innovations in GaN-on-Si technology and its G-FET fast-switching, high-efficiency power transistors.

See related items:

Aixtron ships AIX G5+ C MOCVD system to Exagan for production ramp of GaN-on-Si power-switching devices

Exagan raises €5.7m to produce GaN-on-Si power-switching devices on 200mm wafers

X-FAB and Exagan to co-develop high-volume production of high-speed GaN-on-Si power switching devices on 200mm wafers

Tags: GaN-on-Si GaN switching device on silicon

Visit: www.exagan.com

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