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8 March 2016

Wolfspeed to exhibit SiC power portfolio at APEC

Wolfspeed of Raleigh, NC, USA — a Cree Company that makes silicon carbide (SiC) power products including MOSFETs, Schottky diodes, and modules — will be showcasing its solutions at the Applied Power Electronics Conference and Exposition (APEC 2016) in Long Beach, CA (20–24 March). In addition, as part of the conference program, Wolfspeed engineers will present new research and leading application panels.

Exhibiting in booth #1633, Wolfspeed will demonstrate an evaluation board that enables power electronics design engineers to quickly implement the firm's 900V SiC MOSFETs (claimed to be the industry's first 900V SiC MOSFET portfolio, including exclusive SiC-optimized surface-mount packaged devices) and an evaluation unit utilizing high-performance SiC power modules for three-phase inverter applications.

"Our latest evaluation board allows design engineers to quickly and easily evaluate the quality and performance of these MOSFETs for themselves," says Guy Moxey, senior director of power products.

Wolfspeed will showcase its portfolio of 900V SiC MOSFETs in the surface-mount 7L-D2PAK package, and demonstrate a pre-assembled PCB evaluation board that allows design engineers to evaluate SiC MOSFET switching waveforms, gate driver performance, and circuit protection features to quickly prototype a SiC power converter. The evaluation board (available through authorized distributors) contains two 900V C3M MOSFETs with separate Kelvin sources configured in a flexible half-bridge circuit capable of prototyping a synchronous buck or boost inverter. This represents an optimal board layout, short-circuit protection, and thermal management using an isolated heat-sink to evaluate any 7L-D2PAK 900V Wolfspeed MOSFET.

The firm will also demonstrate a new high-performance three-phase power evaluation unit that reduces the development time required to implement SiC power modules in a three-phase inverter. Using Wolfspeed's soon-to-be released CAS300M12HM2 SiC power module and gate drivers, the evaluation unit provides a modular, configurable circuit design using standard components to rapidly optimize three-phase SiC power module designs for performance, efficiency, thermal management, and circuit protection.

Conference presentations

On 23 March (2pm, Room 104A), business development & program manager Jeffrey Casady will present what is claimed to be industry-first performance via the paper 'Record-Low 10mΩ 900V SiC MOSFET in TO-247' authored by Casady, Vipindas Pala, Gangyao Wang, Brett Hull, and Scott Allen. Presented as part of APEC's 'Advances in Wide Bandgap Devices' session, the presentation describes how Wolfspeed's 900V SiC MOSFET achieves what is claimed to be record-low specific ON-resistance and RDSon temperature coefficient, which enable the development of discrete switching devices that far exceed the current densities of super-junction MOSFETs.

In addition, chief technology officer John Palmour will co-chair the technical session 'Power Semiconductors Enabling Next-Generation Applications' on 24 March (8:30–11:30am, Room 203AB), consisting of a series of presentations designed to showcase the potential for advanced wide-bandgap power semiconductors in power electronics applications.

See related items:

Cree names Power and RF division Wolfspeed

Cree launches first 900V SiC MOSFET platform

Tags: Cree SiC MOSFET

Visit: www.apec-conf.org

Visit: www.wolfspeed.com/power/products

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