CLICK HERE: free registration for Semiconductor Today and Semiconductor Today ASIACLICK HERE: free registration for Semiconductor Today and Semiconductor Today ASIA

Join our LinkedIn group!

Follow ST on Twitter


12 January 2016

EpiGaN's GaN-on-Si epiwafers to be distributed globally by SunEdison

EpiGaN nv of Hasselt, near Antwerp, Belgium, which supplies commercial-grade gallium nitride on silicon (GaN-on-Si) epitaxial wafers for 650V HEMT (high-electron-mobility transistor) power semiconductors, has signed a global representation and distribution agreement granting silicon substrate maker SunEdison Semiconductor exclusive rights to market and sell its 150mm and 200mm GaN-on-Si epiwafers for power switching applications, strengthening EpiGaN's worldwide reach and transitioning EpiGaN into a global GaN epiwafer supplier.

Incorporated in 2010, EpiGaN was founded by chief executive officer Dr Marianne Germain, chief technology officer Dr Joff Derluyn and chief operating officer Dr Stefan Degroote as a spin-off of nanoelectronics research center Imec of Leuven, Belgium. The founders jointly developed GaN-on-Si technology at Imec, part of which has been licensed to EpiGaN.

EpiGaN develops III/V materials and delivers GaN-on-Si epiwafers to device makers worldwide. Its product portfolio covers power switching applications up to 650V as well as RF power devices for millimeter-wave applications. The firm is currently developing and sampling GaN structures on 200mm Si substrates for power switching devices to enable its customers to position themselves in rapidly growing market segments.

EpiGaN says that a key concept of its technology base is the in-situ SiN cap layer, which is claimed to provide best-in-class passivation properties and superior device reliability. The use of in-situ SiN allows the use of pure AlN layers as barrier material, with the resulting heterostructures having sheet resistance values below 300Ohm/sq.

It is reckoned that combining EpiGaN's GaN-on-Si technology with SunEdison Semiconductor's market presence and expertise will create a new one-stop solution for integrated device manufacturers (IDMs) that are active in next-generation GaN power technology on silicon substrates.

"This new agreement with a well-established supplier such as SunEdison Semiconductor, with its excellent track record in the power electronics industry, will enable us to provide additional value to our global
customer base through our superior GaN-on-Si products, customer services and technical support," says EpiGaN's co-founder & CEO Dr Marianne Germain.

"EpiGaN's strong technology capability complements our own, and we look forward to further developing this promising market together," comments SunEdison Semiconductor's president & CEO Shaker Sadasivam. 

Tags: EpiGaN GaN-on-Si

Visit: www.sunedisonsemi.com

Visit: www.epigan.com

See Latest IssueRSS Feed