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16 December 2016

Transphorm's fully packaged GaN FETs available via Digi-Key

Transphorm Inc of Goleta, near Santa Barbara, CA, USA says that its gallium nitride (GaN) FETs in standard TO-xxx through-hole and PQFN88 surface-mount packaging are available for immediate shipment from global electronic components distributor Digi-Key Electronics of Thief River Falls, MN, USA as part of a new global distribution agreement.

Transphorm designs and manufactures what it claims are the industry's only JEDEC-qualified GaN FETs for high-voltage power conversion applications. The product portfolio includes 600V and 650V discretes for power levels up to 4.5kW.

"The Transphorm team uniquely delivers a vertically integrated approach to GaN development [design, fabrication, device, and application integration]," says Mike White, senior VP, sales & marketing. "Our expertise applies to each layer of production — from the epitaxy tech through to the application development support," he adds. "We're deeply invested in the end-to-end process so that we can deliver the highest-quality, highest-reliability GaN technology available and, ultimately, help GaN achieve its promise as the new solution to power density challenges."

Transphorm pairs its depletion-mode, high-voltage GaN FET with a standard, low-voltage silicon MOSFET, creating a hybrid device (cascode switch) that operates as normally-off and is compatible with off-the-shelf silicon drivers for ease of use. GaN is said to provide higher performance, higher power density, and overall lower system cost.

Tags: Transphorm GaN-on-Si GaN HEMT Power electronics

Visit: www.digikey.com

Visit: www.transphormusa.com

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