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IQE

28 September 2015

Qorvo launches 3W GaN-on-SiC Ka-band power amplifier for commercial VSAT satellite ground terminals

Qorvo Inc, a provider of core technologies and RF solutions for mobile, infrastructure and aerospace/defense applications, has launched a cost-effective, high-performance Ka-band 3-watt GaN power amplifier (PA) for commercial VSAT satellite ground terminals transmitting high-speed internet data.

The TGA2636-SM GaN PA is fabricated using Qorvo's 0.15μm gallium nitride on silicon carbide (GaN-on-SiC) process, and operates across a 28–31GHz frequency range while delivering 3W of saturated output power and 25dB linear gain at 30% power-added efficiency (PAE) in a compact 5mm x 5mm surface mount package.

"Qorvo's 0.15μm high-frequency GaN process delivers three times the power density of past-generation GaAs pHEMT solutions," reckons Gorden Cook, general manager of Qorvo's transport business unit. "With unmatched, power, device gain and reliability, the technology is ideal for both saturated and linear high power amplifier for Ka-band satellite ground terminal transmit applications," he adds. "Supporting both saturated and linear applications, the TGA2636-SM delivers 3W of peak output power for traditional saturated-power VSAT ground terminal applications and, when operated in a 'linear power back-off mode' required for higher-order modulation systems, enables more effective use of the Ka-band spectrum, resulting in higher data rates delivered to the user."

The new GaN VSAT power amplifier began sampling in third-quarter 2015. Production quantities will be available in first-quarter 2016.

Qorvo showcased its GaN power amplifiers at European Microwave Week (EuMW 2015) in Paris, France (8-10 September).

Tags: Qorvo GaN RF GaN-on-SiC

Visit: www.qorvo.com

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