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11 September 2015

EPC adds dual E-mode 120V, 60mΩ power transistor for wireless power transfer Class-E amplifiers

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has introduced the EPC2110 as the newest member of EPC's family of enhancement-mode gallium nitride integrated circuits.

The EPC2110 is a dual (common-source) eGaN FET configuration in a small 1.35mm x 1.35mm, 120VDS, 20A device with a maximum RDS(on) of 60mΩ with 5V applied to the gate. The GaN IC delivers what is claimed to be high performance due to its ultra-high switching frequency, extremely low RDS(on), exceptionally low QG and in a very small package.

Compared to a silicon power MOSFET with similar on-resistance, the EPC2110 is much smaller and has many times superior switching performance, EPC reckons. Circuit applications that benefit from the eGaN IC's performance include ultra-high-frequency DC-DC conversion, synchronous rectification, class-D audio amplifiers and, most notably, wireless power transfer.

The EPC2110 is priced at $1.06 in 1000-unit quantities, and is available through Digi-Key Corp.

Tags: EPC E-mode GaN FETs

Visit: http://digikey.com/Suppliers/us/Efficient-Power-Conversion.page

Visit: http://epc-co.com/epc/Products/eGaNFETs/EPC2110.aspx

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