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6 October 2015

EPC adds 100V, 1A, 550mΩ E-mode GaN power transistor for wireless charging Class-D and Class-E amplifier applications

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has introduced the EPC2037 as the newest member of its family of enhancement-mode gallium nitride power transistors.

The EPC2037 is a 0.9mm x 0.9mm 100VDS, 1A device with a maximum RDS(on) of 550mΩ with 5V applied to the gate. The GaN transistor delivers what is claimed to be high performance due to its ultra-high-switching frequency, low RDS(on), exceptionally low QG and small package. This eGaN FET was designed to be driven directly from a digital logic IC thus eliminating the need for a separate and costly driver IC.

Compared to a silicon power MOSFET with similar on-resistance that does require a driver IC, the EPC2037 is much smaller and has many times superior switching performance, EPC reckons. In addition to wireless charging, circuit applications that benefit from the eGaN FET's performance include high-frequency DC-DC conversion, LiDAR/pulsed power, and class-D audio amplifiers.

To support easy 'in circuit' performance evaluation of the EPC2037, the EPC9051 is available as a high-efficiency, differential-mode class-E amplifier development board that can operate up to 15MHz without the addition of a separate driver IC. The purpose is to simplify the evaluation process of class-E amplifier technology using eGaN FETs by allowing engineers to easily mount all the critical class-E components on a single board that can be easily connected into an existing system.

This board may also be used for applications where a low-side switch is utilized. Examples include, but are not limited to, push-pull converters, current-mode Class-D amplifiers, common-source bi-directional switch, and generic high-voltage, narrow-pulse-width applications such as LiDAR.

The amplifier board features the 100V-rated EPC2037 eGaN FET. The amplifier is set to operate in differential mode and can be re-configured to operate in single-ended mode. The key feature of the development board is that it does not require a gate driver for the eGaN FETs and is driven directly from logic gates. A separate logic supply regulator has also been provided on the board.

Pricing is $0.55 each (in 1000-unit quantities) for the EPC2037 power transistors and $158.13 for the EPC9051 development board. Both products are available from Digi-Key.

Tags: EPC E-mode GaN FETs

Visit: http://digikey.com/Suppliers/us/Efficient-Power-Conversion.page

Visit: http://epc-co.com/epc/Products/eGaNFETs/EPC2037.aspx

Visit: http://epc-co.com/epc/Products/DemoBoards/EPC9051.aspx

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