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22 May 2015

MACOM adds wideband GaN-on-Si power transistor for CW, pulsed and linear operation up to 100W

At the IEEE MTT-S International Microwave Symposium (IMS 2015) in Phoenix, AZ (19-21 May), M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, millimeter-wave and photonic applications) launched the NPT2022, a wideband transistor optimized for DC-2GHz operation and fabricated using a proprietary gallium nitride on silicon (GaN-on-Si) process.

The NPT2022 supports continuous-wave (CW), pulsed and linear operation, with output levels up to 100W (50dBm). The device provides 20dB of gain and 60% drain efficiency at 900MHz when operated at 50V. The depletion-mode (D-mode) high-electron-mobility transistor (HEMT) is available in an industry-standard plastic package with bolt-down flange. The NPT2022 is suitable for defense communications, land mobile radio, avionics, wireless infrastructure, industrial, scientific & medical (ISM) applications and VHF/UHF/L/S-band radar.

Production quantities and samples of the NPT2022 are available from stock.

See related items:

MACOM adds GaN power amplifier for narrowband to broadband applications

MACOM launches fourth-generation GaN technology

Tags: M/A-COM GaN-on-Si

Visit: www.macom.com/products/product-detail/NPT2022

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