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27 May 2015

Explosive growth in China drives RF power semiconductor device sales for wireless infrastructure to over $1bn in 2014

After a successful 2013, the market for RF power semiconductors for wireless infrastructure blew off the chart in 2014, according to a new report from market analyst firm ABI Research. The Asia-Pacific region, and China specifically, continues to be the main driver for RF power semiconductor devices that are sold into the mobile wireless infrastructure segment.

"LTE and TD-LTE air interfaces will be the technology engines of growth for the next five years," comments research director Lance Wilson. "Although, gallium nitride (GaN) devices had meaningful share, the 2014 story was all about silicon LDMOS, which continues to dominate this segment by a large margin," he adds. The increasing and critical need for wireless data remains an important driver for the overall market for RF power semiconductor devices, the report concludes.

The report (part of ABI Research's High-Power RF Active Devices Market Research) examines evolving design parameters and materials, price versus performance, and the interdependent relationship of RF power semiconductors to RF power amplifiers.

Tags: ABI RF power semiconductors GaN

Visit: www.abiresearch.com/market-research/service/high-power-rf-active-devices

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