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20 April 2015

Rohm presenting third-generation SiC trench MOSFETs at PCIM

In Hall 9, Booth 316 at PCIM (Power Conversion Intelligent Motion) Europe 2015 in Nuremberg, Germany (19-21 May), Rohm Semiconductor is presenting its latest power management product designs, including 1200V and 650V silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) based on a trench gate structure, while the firm is also developing SiC MOSFETs with a breakdown voltage of 1700V.

Compared to conventional planar MOSFETs, the trench MOSFETs reach about half the on-resistance over the whole temperature range, while the stability of the gate oxide film and of the body diode remains as high as those of Rohm's second-generation SiC MOSFETs.

Also, the reverse recovery behaviour has been drastically reduced. In principle, there is no tail current during switching, resulting in faster operation and 30% less switching loss. The result is higher reliability and increased current-carrying capacity at a reduced cell density and minimum conductivity while maintaining a compact format, says the firm.

Rohm says that the MOSFETs are suitable for use in switch-mode power supplies (SMPS), renewable energy inverters/converters, EV/HV (electric/hybrid vehicle) inverters and chargers.

See related items:

ROHM launches 80milliOhm 1200V SiC MOSFETs; one with co-packaged anti-parallel SiC Schottky

Tags: ROHM Semiconductor SiC power MOSFET

Visit: www.rohm.com/web/global/sic-mosfet

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