IQE presenting papers on antimonide-based IR materials at SPIE DSS

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20 April 2015

IQE presenting papers on antimonide-based IR materials at SPIE DSS

At SPIE Defense, Security and Sensing Technologies conference (DSS 2015) in Baltimore, MD, USA (21-23 April), epiwafer foundry and substrate maker IQE plc of Cardiff, Wales, UK is presenting a series of three invited papers on recent key developments in advanced infrared technologies and the commercialization of materials:

• molecular beam epitaxy (MBE) growth of antimony (Sb)-based bulk nBn infrared photodetector structures on ≥6-inch gallium antimonide (GaSb) substrates;
• growth and characterization of ≥6-inch epitaxy-ready GaSb substrates for use in large-area infrared detector applications; and
• a study of doping influences on transmission of large-diameter GaSb substrates for long-wave (LWIR) to very-long-wavelength (VLWIR) infrared applications.

Tags: IQE GaSb IR

Visit: http://spie.org/defense-security-sensing.xml

Visit: www.iqep.com