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12 September 2014

GaN Systems to show new gallium nitride high-power transistors at Energy Conversion Congress & Expo

In booth 419 at the IEEE Energy Conversion Congress & Expo (ECCE 2014) in Pittsburgh, PA, USA (14–18 September), GaN Systems Inc of Ottawa, Ontario, Canada, a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications, is showcasing its latest products among its range of GaN power transistors. Based on its proprietary Island Technology, the firm produces highly efficient, smaller transistors at lower cost than traditional silicon MOSFETs and IGBTs, it is claimed.

GaN Systems gallium nitride power semiconductors

GaN Systems says that its devices feature intrinsic fast switching and dense current-carrying capability. This is further enhanced by the firm’s GaNPX packaging, which has no wire bonds, minimizing inductance and thermal resistance and increasing reliability.

The new devices from GaN Systems bring smaller, lighter and more efficient power electronics to applications including consumer appliances, data-center server racks, heavy-duty battery-operated power tools, and notebook travel adaptors. With current ratings from 8A to 200A, GaN Systems claims that, through an exclusive worldwide distribution agreement with Mouser Electronics, it is the first company to offer a comprehensive product range of gallium nitride devices to the global market.

See related items:

GaN Systems to showcase 100V and 650V power semiconductors at EPE ’14 ECCE Europe

GaN Systems launches 650V normally-off GaN transistor family

GaN Systems launches normally-off 100V GaN transistors in optimized low-inductance and thermally efficient packaging

Tags: GaN Systems Power electronics

Visit: www.gansystems.com

Visit: http://2014.ecceconferences.org

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