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28 October 2014

GeneSiC launches improved, lower on-resistance 1700V and 1200V SiC junction transistors

Silicon carbide (SiC) power semiconductor supplier GeneSiC Semiconductor Inc of Dulles, VA, USA has announced the availability of a family of low on-resistance 1700V and 1200V SiC junction transistors in TO halogen-free, RoHS-compliant TO-247 packages.

The 1700V SiC junction transistors comprise the 25mΩ GA50JT17-247, 65mΩ GA16JT17-247 and 220mΩ GA04JT17-247. The 1200V SiC junction transistors comprise the 25mΩ GA50JT12-247, 120mΩ GA10JT12-247 and 210mΩ (GA05JT12-247). For both, current gain (hFE) is >90, maximum junction temperature (Tjmax) is 175oC, and the turn on/off; rise/fall times are <30ns (typical). All devices are 100% tested to full voltage/current ratings.

GeneSiC’s new GA50JT17-247 SiC junction transistor. Picture: GeneSiC’s new GA50JT17-247 SiC junction transistor.

The use of high-voltage, high-frequency, high-temperature and low on-resistance capable SiC junction transistors can increase conversion efficiency and reduce the size/weight/volume of power electronics applications requiring higher bus voltages, says GeneSiC. The devices are targeted at a wide variety of applications including DC micro-grids, Vehicle Fast chargers, server, telecom and networking power supplies, uninterruptable power supplies (UPS), solar inverters, wind power systems, and industrial motor control systems.

GeneSiC says that its SiC junction transistors (SJT) exhibit ultra-fast switching capability (similar to that of SiC MOSFETs), a square reverse-biased safe operation area (RBSOA), as well as temperature-independent transient energy losses and switching times. The switches are gate-oxide free, normally-off, exhibit positive temperature coefficient of on-resistance, and are capable of being driven by commercial gate drivers (unlike other SiC switches it is claimed). In contrast to other SiC switches, unique advantages of the SJTs are claimed to be higher long-term reliability, greater than 10 microsecond short-circuit capability, and superior avalanche capability.

“These improved SJTs offer much higher current gains (>100), highly stable and robust performance as compared to other SiC switches,” says president Dr Ranbir Singh. “GeneSiC’s SJTs offer extremely low conduction losses at rated currents as superior turn-off losses in power circuits,” he claims. “Utilizing the unique device and fabrication innovations, GeneSiC’s transistor products help designers achieve a more robust solution.”

See related items:

GeneSiC launches 1700V and 1200V SiC junction transistors

Tags: GeneSiC SiC

Visit: www.genesicsemi.com/commercial-sic/sic-junction-transistors

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