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14 October 2014

Second edition of "GaN Transistors for Efficient Power Conversion" published

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has announced the publication of the second edition of “GaN Transistors for Efficient Power Conversion,” a textbook written by power conversion industry experts and published by John Wiley and Sons.  It provides power system design engineering students, as well as practicing engineers, basic technical and application-focused information on how to design more efficient power conversion systems using GaN-based transistors.

The second edition has been substantially expanded to reflect the latest in GaN technology advances. It serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are:

  • Discussions on the fundamental physics of these power semiconductors
  • Layout and other circuit design considerations
  • Application examples employing GaN including RF envelope tracking, wireless power transfer class-D audio and harsh radiation environments
  • Specific design techniques when employing GaN devices

All four authors have doctorates in scientific disciplines and are widely recognized published authors.  They are pioneers in the emerging GaN transistor technology, with Dr Alex Lidow concentrating on transistor process design and Drs Johan Strydom, Michael DeRooij, and David Reusch focusing on power transistor applications.

Tags: EPC GaN

Visit: www.epc-co.com

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