CLICK HERE: free registration for Semiconductor Today and Semiconductor Today ASIACLICK HERE: free registration for Semiconductor Today and Semiconductor Today ASIA

Join our LinkedIn group!

Follow ST on Twitter


15 May 2014

Pasternack launches family of 14 broadband, high-gain LNAs

RF, microwave and millimeter-wave product maker Pasternack Enterprises Inc of Irvine, CA, USA has launched a new family of low-noise amplifiers (LNA) capable of high gain and broadband performance between 9kHz and 18GHz frequencies, which are widely used across the spectrum of military and commercial applications.

Low Noise AmplifiersThe 14 new LNAs provide a choice of noise figures, gain levels, frequency ranges and power outputs, depending on the intended use. The new LNA category exhibits broadband performance from 9kHz to 18GHz, noise figures between 0.8dB and 3dB, gain levels of 25-50dB, gain flatness from ±0.75dB to ±1.25dB and power output levels (P1dB, or Psat) of 10-18dBm. The performance is achieved using a hybrid microwave integrated circuit design and gallium arsenide (GaAs) pseudomorphic high-electron-mobility transistor (pHEMT) technology.

The new LNAs are connectorized SMA modules that are unconditionally stable and include built-in voltage regulation, bias sequencing, and reverse-bias protection for added reliability. Depending on the intended application, both hermetically sealed and non-hermetically sealed versions are available. The LNAs are fully matched internally for input and output at 50 ohm, eliminating the need for sensitive external RF tuning components.

“Our aggressive active component growth strategy is intended to satisfy market demand for a wide selection of amplifiers that are immediately available off the shelf, thus eliminating extended lead times when the customer’s need arises,” says active RF/microwave products manager Michael Rachlin.

Tags: LNA GaAs pHEMT

Visit: www.pasternack.com/pages/Featured_Products/low-noise-amplifiers.htm

See Latest IssueRSS Feed