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21 May 2014

GCS offers P3 InGaP HBT and 0.25μm E-mode pHEMT foundry processes

Pure-play III-V compound semiconductor wafer foundry Global Communication Semiconductors LLC (GCS) of Torrance, CA, USA says that its proprietary indium gallium phosphide (InGaP) heterojunction bipolar transistor (HBT)process is now being offered to address 802.11ac requirements in which high gain, high linearity and high efficiency are key requirements for 5GHz operation. The firm is also now offering the 0.25μm enhancement-mode (E-mode) pseudomorphic high-electron-mobility transistor (pHEMT) process for high-performance receiver applications, with useful frequencies of up to 26GHz.

“Most available HBT processes have a maximum stable gain (MSG) of 23dB, while our P3 InGaP HBT process can achieve a MSG of 26dB at 5GHz, which meets the 802.11ac and the key LTE 4G PA requirements for high gain, high efficiency, high linearity and robustness,” says CEO Brian Ann. “A BVCEO of 18V allows the amplifiers to operate beyond a typical 5VDC bias for most HBT amplifiers,” he adds.

“In addition, we introduced a new 0.25μm E-mode pHEMT super low-noise process to further enhance our broad portfolio of pHEMT process family,” Ann continues. The new pHEMT process achieves an fmin of 0.38dB with an associated gain of 13.5dB @ 12GHz. “The process also has an fmax of 170GHz, which is capable of meeting most high-frequency commercial receivers and military phased-array radar systems with demanding performance requirements,” notes Ann.

Tags: GCS

Visit: www.gcsincorp.com

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