Temescal

Semigas

CLICK HERE: free registration for Semiconductor Today and Semiconductor Today ASIACLICK HERE: free registration for Semiconductor Today and Semiconductor Today ASIA

Join our LinkedIn group!

Follow ST on Twitter

IQE

24 March 2014

Freescale launches first 2W 1500-2700MHz integrated power amplifier with over 40dB gain in single 5V device

Freescale Semiconductor of Austin, TX, USA, which provides RF power transistors for cellular markets, has launched what is claimed to be the first 2W integrated power amplifier (PA) operating with a 5V supply and delivering more than 40dB of gain to cover all frequency bands between 1500MHz and 2700MHz. The device supports any cellular standard operating at these frequencies, including GSM, 3G, 4G and LTE.

The MMZ25333B is a multi-stage power amplifier based on indium gallium phosphide (InGaP) heterojunction bipolar transistor (HBT) technology and is housed in an industry-standard 4mm QFN package.

Freescale says that its versatile, high-gain MMZ25333B is suitable for driver and pre-driver applications in macrocell base stations, and final-stage applications in small cells. The PA’s high performance and integration help to reduce part counts, streamline supply chains and optimize costs, claims the firm. Also, because the device can be used across multiple platforms and frequency bands, it can be reused from project to project, simplifying supply chain inventory, it adds.

“No other device covers the significant portion of the wireless communications spectrum from 1500-2700MHz and can match output power of 2W and gain of more than 40dB,” claims Ritu Favre, senior VP & general manager of Freescale’s RF business.

Production-ready samples of the MMZ25333B are available now. The device is planned for full production in April.

Tags: Freescale InGaP HBT

Visit: www.freescale.com/RFlowpower

Share/Save/Bookmark
See Latest IssueRSS Feed

AXT