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13 March 2014

Cree presenting at APEC on SiC MOSFETs

At the Applied Power Electronics Conference and Exposition (APEC 2014) in Forth Worth, Texas (16-20 March), Cree Inc of Durham, NC, USA is exhibiting in booth #1220 as well as delivering three presentations.

Cree will provide information about its new CPW5 Z-Rec high-power Schottky diodes (claimed to be the first commercially available family of 50A SiC rectifiers).

The firm is also conducting an exhibitor seminar (Session #4, 19 March; 3:45-4:15pm) about its second-generation SiC MOSFETs, which are said to enable smaller, higher-efficiency solutions at cost parity with silicon-based technologies. In addition, the firm is participating in two technical sessions:

  • T30-Semiconductor Devices; Track: Devices and Components (20 March, 2-5:30pm, Room 2), ‘Dynamic and Static Behavior of Packaged Silicon Carbide MOSFETs in Paralleled Applications’.
  • D08-Higher Power Device Switching; Track: Devices and Components (20 March; 11:30am-2pm, Poster Area), ‘1000V Wide Input Auxiliary Power Supply Design with 1700V Silicon Carbide (SiC) MOSFET for Three-Phase Applications’.

See related items:

Cree launches first 50A SiC rectifiers

Cree begins volume production of second generation SiC MOSFET

Tags: Cree

Visit: www.apec-conf.org

Visit: www.cree.com/power

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