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17 July 2014

BeRex adds family of MESFET chips

BeRex Inc of San Jose, CA, USA (which designs and manufactures RF and microwave GaAs devices) has announced the immediate availability of a new family of low-phase-noise, high-linearity metal–semiconductor field-effect transistors (MESFET) chips to complement its line of pHEMT transistors.

The new BCF-series addresses the need for low phase noise with high gain and power in both broad-band and narrow-band applications (such as single- and multi-stage amplifiers, oscillators, synthesizers, etc) ranging in frequency from DC to 26.5GHz. Typical applications require a high level of OIP3 (output third-order intercept point) linearity and a low phase noise that cannot be easily achieved with other technologies, it is claimed.

The BCF-series family consists of seven devices, each fabricated using a 0.25µm gate length and with a gate width of 200µm, 300µm, 400µm, 600µm, 800µm, 1200µm or 2400µm, depending on the client’s gain and power requirements (up to 1 Watt for the largest 2400µm device).

The BCF-series of MESFET chips is produced in the USA using what’s claimed to be state-of-the-art metallization, plus Si3N4 passivation to optimize reliability.

“These parts, along with our existing pHEMT family of packaged and bare-die FET products, go a long ways towards fulfilling the commitment to our clients of becoming their one-stop source for their RF and microwave FET needs,” says VP of research & development Dr Alex Yoo.

The BCF-series of chips is now available in sample and production volumes.

Tags: GaAs MESFET pHEMT

Visit: www.berex.com

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