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23 December 2014

MIT's Jesús del Alamo named an American Physical Society Fellow

Jesús del Alamo, the Donner Professor of Science in the Massachusetts Institute of Technology (MIT) Department of Electrical Engineering and Computer Science, has been named a fellow of the American Physical Society (APS) for “fundamental contributions to the development of III-V compound semiconductor electronics.” The APS fellowship signifies recognition by professional peers for exceptional contributions to physics.

Picture: MIT’s Jesus del Alamo, named a fellow of the American Physical Society. Photo: Patricia Sampson/EECS.

After graduating with a PhD from Stanford University in 1985, del Alamo joined NTT Research Laboratories in Atsugi, Japan. Over a two-and-a-half-year period there, he started investigating heterojunction transistors based on III-V compound semiconductors such as gallium arsenide (GaAs), indium gallium arsenide (InGaAs), and indium phosphide (InP).

In 1988, del Alamo joined MIT and, since then, has remained actively engaged in the investigation of advanced electronics based on these materials, initially for high-frequency communications and radar applications and more recently for future ultra-scaled logic complementary metal-oxide semiconductors (CMOS).

For his contributions to this field, del Alamo received the 2012 Intel Outstanding Researcher Award in Emerging Research Devices and the Semiconductor Research Corporation 2012 Technical Excellence Award. He also received the 2012 Electron Devices Society Education Award, given annually by the Institute of Electrical and Electronics Engineers (IEEE) and in recognition of innovations in electrical engineering education. Del Alamo is also a fellow of the IEEE.

Tags: GaAs InGaAs InP CMOS

Visit: www-mtl.mit.edu/~alamo

Visit: www.aps.org/programs/honors/fellowships

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