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24 May 2013

GCS makes available two new InGaP HBT foundry processes

Pure-play compound semiconductor wafer foundry Global Communication Semiconductors LLC (GCS) of Torrance, CA, USA says that its proprietary indium gallium phosphide (InGaP) heterojunction bipolar transistor (HBT) D5 and P7 foundry processes will now be offered to address the requirements of wide-tuning-range voltage-controlled oscillators (VCOs) for point-to-point markets and 12V power amplifiers (PAs) for small-cell infrastructure markets, respectively.

“The D5 InGaP HBT process offers an advantage of a wider (2x) frequency tuning range, in addition to maintaining the super low phase noise performance offered by our already successful D1 VCO process,” says GCS’ CEO Brian Ann.

“P7 InGaP HBT process, with a BVceo of 28V, was developed to address the small-cell base-station infrastructure PA requirement of 12V operation,” he adds. The process can be used to develop linear PA with an output power of 1, 2, 4, 8, 10W, etc. “As an example, a 2W PA has demonstrated a power density of 0.917mW/μm2 with a power-added efficiency of >65%,” Ann continues.

“These two new processes expand our InGaP HBT process portfolio to a total of seven processes, which are sufficient to address any wireless infrastructure PA and VCO requirements,” Ann says.

The latest data sheets and product information will be available at GCS’ booth #1941 at the 2013 IEEE MTT-S International Microwave Symposium (IMS) in Seattle, WA, USA (4-6 June).

Tags: GCS


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