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15 March 2013

Transphorm launches first JEDEC-qualified 600V GaN-on-Si power devices

Transphorm Inc of Goleta, near Santa Barbara, CA, USA (which designs and delivers power conversion devices and modules) has launched the Total GaN family of gallium nitride on silicon transistors and diodes, establishing what is claimed to be the first JEDEC-qualified 600V GaN device platform. The firm reckons that this marks a significant milestone in the broad adoption of GaN-based power electronics in power supplies and adapters, photovoltaic (PV) inverters for solar panels, motor drives, and power conversion for electric vehicles.

Based on Transphorm’s patented EZ-GaN technology, the TPH3006PS GaN high-electron-mobility transistor (HEMT) combines low switching and conduction losses to reduce energy loss by 50% compared to conventional silicon-based power conversion designs. The TO-220-packaged GaN transistor features low on-state resistance (RDS(on)) of 150mΩ, low reverse-recovery charge (Qrr) of 54nC and high-frequency switching capability, resulting in more compact, lower-cost systems.

Also available in industry-standard TO-220 packages, the TPS3410PK and TPS3411PK GaN diodes offer 6A and 4A operating currents, respectively, with a forward voltage (Vf) of 1.3V.

In addition, three application kits — PFC (TDPS400E1A7), Daughter Board (TDPS500E0A) and Motor Drive (TDMC4000E0I) — are available for rapidly benchmarking the in-circuit performance of Transphorm’s products.

“Transphorm has accomplished the first qualification of 600V GaN devices on silicon substrates,” claims president Primit Parikh. "This is critically important because it allows manufacturers to access the energy savings from our GaN transistor and diode products with the cost benefits of silicon,” he adds. “The introduction of the Total GaN family dispels the myth that qualification of high-voltage GaN on silicon is not possible, and enables the introduction of new power products in the marketplace that are dramatically more efficient compared to silicon-based products.”

Transphorm says that its proprietary EZ- GaN platform can reduce power system size, increase energy density and deliver high efficiencies across the grid. For a low-risk roadmap to the next generation of power conversion technology, EZ-GaN provides a cost-effective, customizable and easy-to-use solution ready for commercial scale, the firm claims.  

For approved customers, the TPH3006PS HEMT device is available at a price of $5.89 each in 1000-unit quantities. The TPS3410PK and TPS3411PK diodes are priced at $2.06 and $1.38, respectively, also in 1000-unit quantities.

Tags: Transphorm GaN


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