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15 March 2013

EPC introduces development board featuring 100V eGaN FETs

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA has introduced the EPC9010 development board to make it easier for engineers to start designing with a 100V enhancement-mode gallium nitride (eGaN) field-effect transistor (FET) in applications such as high-speed DC-DC power supplies, point-of-load converters, class D audio amplifiers, hard-switched and high-frequency circuits.

The EPC9010 development board is a 100V maximum device voltage, 7A maximum output current, half-bridge with onboard gate drives, featuring the EPC2016 eGaN FET. The purpose of the development board is to simplify the evaluation process of eGaN FETs by including all the critical components on a single board that can be easily connected into any existing converter.

The EPC9010 development board is 2” x 1.5” and contains two EPC2016 eGaN FET in a half-bridge configuration using the LM5113 gate driver from Texas Instruments, as well as supply and bypass capacitors. The board contains all critical components and layout for optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency calculation.

EPC9010 development boards are priced at $99 each and are available from Digi-Key. A Quick Start Guide is included for reference and ease of use.

Tags: EPC GaN FETs



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