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27 June 2013

United Silicon Carbide chooses Silvaco's TCAD device simulators for SiC power device modeling

United Silicon Carbide Inc (USCi) of Monmouth Junction, NJ, USA has selected the TCAD simulators of Silvaco Inc of Santa Clara, CA, a provider of technology computer-aided design (TCAD), circuit simulation and electronic design automation (EDA) software tools, for the modeling of its silicon carbide (SiC) power devices. After an extensive evaluation and competitive bidding process, USCi says that it chose Silvaco for its unique capabilities to enhance the R&D of their SiC power devices.

“Silvaco’s Athena process and Atlas device simulators offer the kinds of simulation capabilities that our engineers need to understand the manufacturing effects, and the electrical and thermal characteristics in our SiC power devices," says USCi’s VP of engineering Anup Bhalla. "With these capabilities our engineers have the ability to develop and enhance our power device designs through simulation prior to manufacturing, and know that our devices are going to perform as we expect them to after manufacturing and with higher production yields. This allows USCi to get our product to market with minimal time and costs,” he adds.

“Silicon carbide is a technology that Silvaco implemented into our simulators several years ago,” notes Silvaco’s CEO David Halliday. “The maturity of this capability has been extremely important and beneficial to our customers in the power industry.”

Tags: SiC



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