6 June 2013

RFMD launches 500W pulse power GaN L-band amplifier for radar applications

RF Micro Devices Inc of Greensboro, NC, USA has introduced the RFHA1027, a gallium nitride (GaN) matched power transistor (MPT) delivering pulse power performance of 500W in a compact flanged package at L-band frequencies. 

Operating at 1.2-1.4GHz and provides 500W of pulsed RF power from a 50V supply, the new amplifier is optimized for pulsed power applications requiring efficiency and compact size. Offering high gain of 16.5dB and high efficiency of 55%, the RFHA1027 is housed in a small form factor package of 24mm by 17.4 mm, and is input and output matched to 50-Ohms, minimizing external components. In addition, the package leverages RFMD’s heat-sink and power-dissipation technologies to deliver what is claimed to be excellent thermal stability and conductivity.

The RFHA1027 targets new and existing radar architectures requiring ruggedness and reliability. Its introduction follows the release in late 2011 of the RFHA1020 (280W L-band) and RF3928 (280W S-band). 

RFMD is showcasing its portfolio of RF components in booth 730 at the IEEE MTT-S International Microwave Symposium (IMS 2013) in Seattle, WA, USA (4-6 June).

See related items:

RFMD launches 225W and 280W GaN wideband pulsed power amplifiers

Tags: RFMD GaN HEMTs

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